마그네트론 자기장 구조를 가진 전자 싸이크로트론 공명 플라즈마를 이용한 고플럭스 중성 입자빔 발생에 관한 연구
- 마그네트론 자기장 구조를 가진 전자 싸이크로트론 공명 플라즈마를 이용한 고플럭스 중성 입자빔 발생에 관한 연구
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- Hyperthermal neutral beams (HNB) represent a viable means of overcoming the problems of material processing. HNB etching, HNB nitridation, HNB oxidation, and HNB assisted thin film deposition have been studied and noticeable results have been reported. The key issue with HNB sources is the production of high flux HNBs. Several type HNB sources were developed but high HNB flux at a substrate was not yet achieved.
The purpose of this thesis was to generate high flux HNBs on a substrate. Four studies in this thesis were carried out. First, requirements for high flux HNB generation were theoretically specified. Second, the ECR HNB source with magnetron magnetic field configuration (MMC) was developed and the ECR plasma of the ECR HNB source was characterized using a Langmuir probe, optical emission spectroscopy, and an ion energy analyzer. The results confirmed that the ECR HNB source satisfied the requirements for high flux HNB generation. Third, the ECR HNB source with race track magnetic field configuration (RMC) was developed in an effort to solve the problems of the ECR HNB source with MMC. The ECR plasma of the ECR HNB source with RMC was characterized using a Langmuir probe. HNB energy distributions were obtained from fitting the ion kinetic energy distributions in Gaussian curves. Finally, the ECR HNB source with RMC was applied for GaN epitaxial growth at low substrate temperature. The atomic structure and the thickness of the GaN thin film were investigated using SEM, SIMS, and TEM. The HNB flux at a substrate was obtained from the results.
This thesis contributed to increasing HNB flux at a substrate more than 1*10^15 /cm^2s and to measurements of HNB energy distribution and HNB flux. In addition, single crystalline GaN layers were grown at low substrate temperature using the HNBs produced by the ECR HNB source.
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