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Cited 38 time in webofscience Cited 50 time in scopus
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Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Title
Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN/GaN heterostructure field-effect transistors
Authors
Jeon, CMLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2005
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/9498
DOI
10.1063/1.1906328
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 86, no. 17, 2005-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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