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Cited 42 time in webofscience Cited 40 time in scopus
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Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing

Title
Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing
Authors
Jeon, CMLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2003
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/9452
DOI
10.1063/1.1583140
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 82, no. 24, page. 4301 - 4303, 2003-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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