Article
Cited 42 time in 
Cited 40 time in 
Cited 40 time in
Metadata Downloads
Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing
- Title
- Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing
- POSTECH Authors
- Lee, JL
- Date Issued
- Jan-2003
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 82, no. 24, page. 4301 - 4303, 2003-01
- Files in This Item:
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- LEE, JONG LAM
- Dept of Materials Science & Enginrg