Open Access System for Information Sharing

Login Library

 

Article
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing'

Title
Response to "Comment on 'Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing'
Authors
Jeon, CMLee, JL
POSTECH Authors
Lee, JL
Date Issued
Jan-2003
Publisher
AMER INST PHYSICS
URI
http://oasis.postech.ac.kr/handle/2014.oak/9439
DOI
10.1063/1.1634694
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 83, no. 25, page. 5321 - 5321, 2003-01
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

 LEE, JONG LAM
Dept of Materials Science & Enginrg
Read more

Views & Downloads

Browse