Open Access System for Information Sharing

Login Library

 

Article
Cited 48 time in webofscience Cited 0 time in scopus
Metadata Downloads

Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)

Title
Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)
Authors
, Thushari JayasekeraB. D. KongK. W. KimM. Buongiorno Nardelli
POSTECH Authors
B. D. Kong
Date Issued
Apr-2010
Publisher
AMER PHYSICAL SOC
Abstract
Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices of dopants, we demonstrate that one can achieve a variation of the valence band offset between the graphene Dirac point and the valence band edge of SiC up to 1.5 eV. Finally, via appropriate magnetic doping one can induce a half-metallic behavior in the first graphene monolayer. These results clearly establish the potential for graphene utilization in innovative electronic and spintronic devices.
URI
http://oasis.postech.ac.kr/handle/2014.oak/94162
DOI
10.1103/PhysRevLett.104.146801
ISSN
0031-9007
Article Type
Article
Citation
PHYSICAL REVIEW LETTERS, vol. 104, no. 14, page. 146801, 2010-04
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Views & Downloads

Browse