Open Access System for Information Sharing

Login Library

 

Article
Cited 30 time in webofscience Cited 0 time in scopus
Metadata Downloads

Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Title
Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions
Authors
R. MaoB. D. KongK. W. KimT. JayasekeraA. CalzolariM. Buongiorno Nardelli
POSTECH Authors
B. D. Kong
Date Issued
Sep-2012
Publisher
AMER INST PHYSICS
Abstract
Using calculations from first principles and the Landauer approach for phonon transport, we study the Kapitza resistance in selected multilayer graphene/dielectric heterojunctions (hexagonal BN and wurtzite SiC) and demonstrate (i) the resistance variability (similar to 50 - 700 x 10(-10) m(2)K/17) induced by vertical coupling, dimensionality, and atomistic structure of the system and (ii) the ability of understanding the intensity of the thermal transmittance in terms of the phonon distribution at the interface. Our results pave the way to the fundamental understanding of active phonon engineering by microscopic geometry design. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752437]
URI
http://oasis.postech.ac.kr/handle/2014.oak/94153
DOI
10.1063/1.4752437
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 101, no. 11, page. 113111, 2012-09
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Views & Downloads

Browse