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Pressure sensitive contact transistors operating in subthreshold regime

Title
Pressure sensitive contact transistors operating in subthreshold regime
Authors
BAEK, SANGHOONBAE, GEUNYOELKWON, JIMINCHO, KIL WONJUNG, SUNGJUNE
POSTECH Authors
CHO, KIL WONJUNG, SUNGJUNE
Date Issued
12-Oct-2018
Publisher
한국고분자학회
Abstract
Low power consumption and high sensitivity are essentially required for large-area flexible electronic sensor arrays. In this work we introduce organic thin-film transistors whose source-drain contact varies with applied pressure, called contact transistors. A carbon nanotube-coated micro-structure rubbery polymer is patterned to use as deformable source/drain electrodes of a bottom-gate and top-contact transistor. Both the contact resistance and contact area between the electrodes and a semiconductor layer vary upon pressure applied, leading to the change in transistor’s drain current. A high sensitivity of 10.69 kPa-1, a low limit-of-detection pressure of 12 Pa and a fast response time of ~ 140 ms are successfully realized with the pressure sensitive contact transistors operating in unprecedented subthreshold regime at low gate voltage (~ 1 volt) and ultralow power (~ 10 nW). We finally demonstrate a 5 x 5 active matrix pressure sensor array based on the contact transistors with pixel per inch of 12.83.
URI
http://oasis.postech.ac.kr/handle/2014.oak/94007
ISSN
2384-0307
Article Type
Conference
Citation
2018 한국고분자학회 추계학술대회, 2018-10-12
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