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Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM

Title
Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM
Authors
Lim, SLee, SWoo, JLee, DPrakash, AHwang, H
POSTECH Authors
Hwang, H
Date Issued
Jan-2015
Publisher
ELECTROCHEMICAL SOC INC
Abstract
In this paper, we investigated the effects of inserting an N-doped GeSbTe buffer layer on a Cu/Al2O3-based conducting-bridge random-access memory (CBRAM). The N-doped GeSbTe buffer layer induced a limited Cu ion injection during the set process due to Cu-Te bonding and N-doping in the buffer layer. In addition, joule heating confinement resulting from the low-thermal-conductivity buffer layer led to a low-residual conductive filament after the reset process. As a result, the on/off ratio of the Cu/Al2O3-based device increased from 10(2) to 10(5). Furthermore, the variability of the switching parameters such as high-resistance state and set/reset voltages distributions was significantly mitigated. The N-doping effects were confirmed by comparing the GeSbTe and the N-doped GeSbTe buffer-layer-inserted devices. The N-doped GeSbTe-inserted CBRAM exhibited an on/off ratio of > 10(5) up to 300 DC cycles without any noticeable data-state degradation. (C) 2015 The Electrochemical Society. All rights reserved.
In this paper, we investigated the effects of inserting an N-doped GeSbTe buffer layer on a Cu/Al2O3-based conducting-bridge random-access memory (CBRAM). The N-doped GeSbTe buffer layer induced a limited Cu ion injection during the set process due to Cu-Te bonding and N-doping in the buffer layer. In addition, joule heating confinement resulting from the low-thermal-conductivity buffer layer led to a low-residual conductive filament after the reset process. As a result, the on/off ratio of the Cu/Al2O3-based device increased from 10(2) to 10(5). Furthermore, the variability of the switching parameters such as high-resistance state and set/reset voltages distributions was significantly mitigated. The N-doping effects were confirmed by comparing the GeSbTe and the N-doped GeSbTe buffer-layer-inserted devices. The N-doped GeSbTe-inserted CBRAM exhibited an on/off ratio of > 10(5) up to 300 DC cycles without any noticeable data-state degradation. (C) 2015 The Electrochemical Society. All rights reserved.
URI
http://oasis.postech.ac.kr/handle/2014.oak/92384
DOI
10.1149/2.0011507SSL
ISSN
2162-8742
Article Type
Article
Citation
ECS SOLID STATE LETTERS, vol. 4, no. 7, page. Q25 - Q28, 2015-01
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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