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Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Title
Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application
Authors
Song, JPrakash, ALee, DWoo, JCha, ELee, SHwang, H
POSTECH Authors
Hwang, H
Date Issued
14-Sep-2015
Publisher
AMER INST PHYSICS
Abstract
In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer. (C) 2015 AIP Publishing LLC.
Keywords
CUPROUS-OXIDE; RADICAL OXIDATION; LOW-TEMPERATURE; MEMORY
URI
http://oasis.postech.ac.kr/handle/2014.oak/92363
DOI
10.1063/1.4931136
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 107, no. 11, 2015-09-14
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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