Open Access System for Information Sharing

Login Library

 

Article
Cited 5 time in webofscience Cited 0 time in scopus
Metadata Downloads

1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment

Title
1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment
Authors
Sindhuri, VSon, DHLee, DGSakong, SJeong, YHCho, ITLee, JHKim, YTCristoloveanu, SBae, YIm, KSLee, JH
POSTECH Authors
Jeong, YH
Date Issued
1-Nov-2015
Publisher
ELSEVIER SCIENCE BV
Abstract
In this paper, we have fabricated and investigated the AlGaN/GaN fin-shaped field-effect transistors (FinFETs) with and without TMAH surface treatment. DC and noise characteristics of the FinFETs were compared to evaluate the interface quality between Al2O3 layer and the side-wall GaN surface. The tetramethyl ammonium hydroxide (TMAH)-treated device with a fin width of 70 nm and gate length, L-g = 5 mu m exhibited excellent device performances, such as drain current of 0.16 mA and transconductance (g(m)) of 0.11 ms, both 30% improved, and extremely small gate leakage current of about 10(-9) at V-gs = -5 V which is approximately two orders lower in magnitude compared to that of the device without TMAH treatment. Improved low-frequency noise performances were obtained for TMAH treated device due to the enhanced side-wall quality after the TMAH surface treatment. The trap density was found to be reduced approximately one order after TMAH treatment. Thus, simple surface treatment not only smoothens the sidewall surface but also eliminates the plasma damage caused during the fin etching, which leads to the reduction of trap density in AlGaN/GaN FinFETs. (C) 2015 Elsevier B.V. All rights reserved.
In this paper, we have fabricated and investigated the AlGaN/GaN fin-shaped field-effect transistors (FinFETs) with and without TMAH surface treatment. DC and noise characteristics of the FinFETs were compared to evaluate the interface quality between Al2O3 layer and the side-wall GaN surface. The tetramethyl ammonium hydroxide (TMAH)-treated device with a fin width of 70 nm and gate length, L-g = 5 mu m exhibited excellent device performances, such as drain current of 0.16 mA and transconductance (g(m)) of 0.11 ms, both 30% improved, and extremely small gate leakage current of about 10(-9) at V-gs = -5 V which is approximately two orders lower in magnitude compared to that of the device without TMAH treatment. Improved low-frequency noise performances were obtained for TMAH treated device due to the enhanced side-wall quality after the TMAH surface treatment. The trap density was found to be reduced approximately one order after TMAH treatment. Thus, simple surface treatment not only smoothens the sidewall surface but also eliminates the plasma damage caused during the fin etching, which leads to the reduction of trap density in AlGaN/GaN FinFETs. (C) 2015 Elsevier B.V. All rights reserved.
Keywords
LOW-FREQUENCY NOISE; TRANSISTORS; GAN
URI
http://oasis.postech.ac.kr/handle/2014.oak/92358
DOI
10.1016/j.mee.2015.04.023
ISSN
0167-9317
Article Type
Article
Citation
MICROELECTRONIC ENGINEERING, vol. 147, page. 134 - 136, 2015-11-01
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

 JEONG, YOON HA
Dept of Electrical Enginrg
Read more

Views & Downloads

Browse