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1D Hexagonal HC(NH2)(2)PbI3 for Multilevel Resistive Switching Nonvolatile Memory

Title
1D Hexagonal HC(NH2)(2)PbI3 for Multilevel Resistive Switching Nonvolatile Memory
Authors
LEE, DONGHWA
POSTECH Authors
LEE, DONGHWA
Date Issued
Jul-2018
Publisher
WILEY
Abstract
Organic–inorganic halide perovskite is regarded as one of the potential candidates for next generation resistive switching memory (memristor) material because of fast, millivolt‐scale switching, multilevel capability, and high On/Off ratio. Here, resistive switching property of HC(NH2)2PbI3 (FAPbI3) depending on structural phase is reported. It is found that 1D hexagonal FAPbI3 (δ‐FAPbI3), formed at relatively low temperature, is active in memristor, while 3D trigonal FAPbI3 (α‐FAPbI3), formed at temperature higher than 150 °C, is inactive. Failure of switching from low resistance state to high resistance state is found for α‐FAPbI3, while δ‐FAPbI3 shows stable switching behavior. Density functional calculation reveals that iodine cluster in isotropic 3D α‐FAPbI3 is so stable after forming filament that the filament is hard to be ruptured at off state. However, for anisotropic δ‐FAPbI3, iodine cluster is not stable and migration barrier is much lower for c‐axis (0.48 eV) than for ab‐plane (0.9 eV), which is beneficial for switching. The memristor devices based on δ‐FAPbI3 demonstrate endurance up to 1200 cycles with On/Off ratio (>105), retention time up to 3000 s, multilevel storage capacity, and working even at 80 °C.
Organic-inorganic halide perovskite is regarded as one of the potential candidates for next generation resistive switching memory (memristor) material because of fast, millivolt-scale switching, multilevel capability, and high On/Off ratio. Here, resistive switching property of HC(NH2)(2)PbI3 (FAPbI(3)) depending on structural phase is reported. It is found that 1D hexagonal FAPbI(3) (delta-FAPbI(3)), formed at relatively low temperature, is active in memristor, while 3D trigonal FAPbI3 (alpha-FAPbI(3)), formed at temperature higher than 150 degrees C, is inactive. Failure of switching from low resistance state to high resistance state is found for alpha-FAPbI(3), while delta-FAPbI(3) shows stable switching behavior. Density functional calculation reveals that iodine cluster in isotropic 3D alpha-FAPbI(3) is so stable after forming filament that the filament is hard to be ruptured at off state. However, for anisotropic delta-FAPbI(3), iodine cluster is not stable and migration barrier is much lower for c-axis (0.48 eV) than for ab-plane (0.9 eV), which is beneficial for switching. The memristor devices based on delta-FAPbI(3) demonstrate endurance up to 1200 cycles with On/Off ratio (>10(5)), retention time up to 3000 s, multilevel storage capacity, and working even at 80 degrees C.
Keywords
PEROVSKITE SOLAR-CELLS; HALIDE PEROVSKITE; CH3NH3PBI3 PEROVSKITE; BASE ADDUCT; HYSTERESIS; EFFICIENCY; DEVICES; LENGTHS; IODIDE; MECHANISMS
URI
http://oasis.postech.ac.kr/handle/2014.oak/92302
DOI
10.1002/aelm.201800190
ISSN
2199-160X
Article Type
Article
Citation
ADVANCED ELECTRONIC MATERIALS, vol. 4, no. 9, 2018-07
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 LEE, DONGHWA
Div of Advanced Materials Science
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