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Effect of illumination on the hump phenomenon in I?V characteristics of amorphous InGaZnO TFTs under positive gate-bias stress

Title
Effect of illumination on the hump phenomenon in I?V characteristics of amorphous InGaZnO TFTs under positive gate-bias stress
Authors
Cho, Y.-J.Lee, Y.-H.Kim, W.-S.Kim, B.-K.Park, K.T.Kim, O.
POSTECH Authors
Kim, O.
Date Issued
May-2017
Publisher
Wiley-VCH Verlag
Abstract
We measured the current?voltage (I?V) characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) to investigate the mechanism that causes the hump in their I?V characteristics under positive bias illumination temperature stress (PBITS) and under positive bias temperature stress (PBTS). Hump phenomenon in subthreshold region in I?V characteristics occurred under PBITS and PBTS. The hump threshold voltage (VH) shifted more negatively under PBITS than under PBTS; amount of shift of VH was 6.06 V under PBITS and 3.28 V under PBTS during same stress time, from 2000 to 10,000 s. It is because additional ionized oxygen vacancies (VO + or VO +2) provided by illumination contributed to induce hump phenomenon than in darkness. ? 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
Amorphous films; Amorphous semiconductors; Bias voltage; Indium; Oxide semiconductors; Oxygen vacancies; Semiconducting indium compounds; Thin film circuits; Thin film transistors; Thin films; Threshold voltage; Transistors; Amorphous indiumgallium-zinc oxide (a-IGZO) thin-film transistor (TFTs); Amorphous InGaZnO; InGaZnO; IV characteristics; Positive bias temperatures; Positive gate bias; Sub-threshold regions; Temperature stress; Amorphous materials
URI
http://oasis.postech.ac.kr/handle/2014.oak/92104
DOI
10.1002/pssa.201600503
ISSN
1862-6300
Article Type
Article
Citation
Physica Status Solidi (A) Applications and Materials Science, vol. 214, no. 5, 2017-05
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 KIM, OHYUN
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