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1000V급 4H-SiC Schottky Barrier Diode의 특성

Title
1000V급 4H-SiC Schottky Barrier Diode의 특성
Authors
제정호
POSTECH Authors
제정호
Date Issued
1-Jan-1999
URI
http://oasis.postech.ac.kr/handle/2014.oak/86483
Article Type
Conference
Citation
99 한국반도체 학술대회, 1999-01-01
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 JE, JUNG HO
Dept of Materials Science & Enginrg
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