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변형률 조절을 통한 수직구조 InGaN/GaN 발광다이오드 양자 효율 향상

Title
변형률 조절을 통한 수직구조 InGaN/GaN 발광다이오드 양자 효율 향상
Authors
손준호
Date Issued
2010
Publisher
포항공과대학교
URI
http://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000000790623
http://oasis.postech.ac.kr/handle/2014.oak/841
Article Type
Thesis
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