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Charge Sensitivity Simulation and Characteristics of Radio-Frequency Single-Electron Transistors(RF-SET) by using Single Electron Devices and Circuit Simulator(SIMON)

Title
Charge Sensitivity Simulation and Characteristics of Radio-Frequency Single-Electron Transistors(RF-SET) by using Single Electron Devices and Circuit Simulator(SIMON)
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
29-Nov-2001
Publisher
CEIC
URI
http://oasis.postech.ac.kr/handle/2014.oak/75614
Article Type
Conference
Citation
The 3rd Conference on Electronics and Information Communication.(CEIC 2001), page. 397 - 400, 2001-11-29
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 JEONG, YOON HA
Dept of Electrical Enginrg
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