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MOCVD growth of highly resistive GaN using two step ramping technique for electronic device applications

Title
MOCVD growth of highly resistive GaN using two step ramping technique for electronic device applications
Authors
이종람
POSTECH Authors
이종람
Date Issued
1-May-2003
URI
http://oasis.postech.ac.kr/handle/2014.oak/74008
Article Type
Conference
Citation
ICNS-5, 2003-05-01
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 LEE, JONG LAM
Dept of Materials Science & Enginrg
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