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The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel

Title
The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel
Authors
이정수
POSTECH Authors
이정수
Date Issued
1-Jul-2015
Publisher
NANO KOREA
URI
http://oasis.postech.ac.kr/handle/2014.oak/70043
Article Type
Conference
Citation
NANO KOREA 2015 Symposium, 2015-07-01
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 LEE, JEONG SOO
Dept of Electrical Enginrg
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