Self-bending process에 의한 이중 층 Si/Ge 나노 튜브 형성: 분자 동역학 연구
- Self-bending process에 의한 이중 층 Si/Ge 나노 튜브 형성: 분자 동역학 연구
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- We observe that the Si/Ge nanotube was formed by “self-bending” process of Si/Ge films using a molecular dynamics simulation. This bending phenomenon is showed by internal stresses in the films due to the surface reconstruction and lattice parameter misfit. We demonstrate that a main factor determining bending direction and rate is the misfit stress. And we find that the reconstruction stress of a bottom surface strongly affects the entire self-bending process. The film thickness is also a decisive factor in this process. The thickness limit for the formation of the Si/Ge nanotubes is observed
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