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Self-bending process에 의한 이중 층 Si/Ge 나노 튜브 형성: 분자 동역학 연구

Title
Self-bending process에 의한 이중 층 Si/Ge 나노 튜브 형성: 분자 동역학 연구
Authors
이흥순
Date Issued
2010
Publisher
포항공과대학교
Abstract
We observe that the Si/Ge nanotube was formed by “self-bending” process of Si/Ge films using a molecular dynamics simulation. This bending phenomenon is showed by internal stresses in the films due to the surface reconstruction and lattice parameter misfit. We demonstrate that a main factor determining bending direction and rate is the misfit stress. And we find that the reconstruction stress of a bottom surface strongly affects the entire self-bending process. The film thickness is also a decisive factor in this process. The thickness limit for the formation of the Si/Ge nanotubes is observed
URI
http://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000000563850
http://oasis.postech.ac.kr/handle/2014.oak/683
Article Type
Thesis
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