In-Situ Control of Oxygen Vacancy Concentration by ALD for Resistive Switching Devices
- In-Situ Control of Oxygen Vacancy Concentration by ALD for Resistive Switching Devices
- 백성기; 박상준
- Date Issued
- ALD 2012
- Article Type
- 12th International Conference on Atomic Layer Deposition, 2012-06-20
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