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dc.contributor.author황현상ko
dc.date.accessioned2018-06-18T06:45:15Z-
dc.date.available2018-06-18T06:45:15Z-
dc.date.created2013-03-10-
dc.date.issued2012-06-11-
dc.identifier.citation2012 IEEE Silicon Nanoelectronics Workshop-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/63342-
dc.publisherIEEE Electron Devices Society-
dc.titleBidirectional Selection Device Characteristics of Ultra‐Thin(<3nm) TiO2 layer for 3D Vertically Stackable ReRAM Application-
dc.typeConference-
dc.type.rimsCONF-
dc.contributor.localauthor황현상-
dc.citation.title2012 IEEE Silicon Nanoelectronics Workshop-
dc.description.journalClass1-
dc.identifier.conferencecountryUS-

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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