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Bidirectional Selection Device Characteristics of Ultra‐Thin(<3nm) TiO2 layer for 3D Vertically Stackable ReRAM Application

Title
Bidirectional Selection Device Characteristics of Ultra‐Thin(<3nm) TiO2 layer for 3D Vertically Stackable ReRAM Application
Authors
황현상
POSTECH Authors
황현상
Date Issued
11-Jun-2012
Publisher
IEEE Electron Devices Society
URI
http://oasis.postech.ac.kr/handle/2014.oak/63342
Article Type
Conference
Citation
2012 IEEE Silicon Nanoelectronics Workshop, 2012-06-11
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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