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Ultrathin (<10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications

Title
Ultrathin (<10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications
Authors
황현상
POSTECH Authors
황현상
Date Issued
14-Jun-2012
Publisher
IEEE Electron Devices Society
URI
http://oasis.postech.ac.kr/handle/2014.oak/63340
Article Type
Conference
Citation
2012 IEEE Symposium on VLSI Technology and Circuits, 2012-06-14
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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