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Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

Title
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress
Authors
강봉구김동우
POSTECH Authors
강봉구
Date Issued
1-Oct-2012
Publisher
Microelectronics Reliability
URI
http://oasis.postech.ac.kr/handle/2014.oak/62646
Article Type
Conference
Citation
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2012-10-01
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강봉구KANG, BONG KOO
Dept of Electrical Enginrg
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