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dc.contributor.author정윤하ko
dc.date.accessioned2018-06-18T05:46:20Z-
dc.date.available2018-06-18T05:46:20Z-
dc.date.created2013-02-04-
dc.date.issued2012-09-05-
dc.identifier.citationThe International Conference on Simulation of Semiconductor Processes and Devices-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/62342-
dc.publisherIEEE-
dc.titleModeling and Analysis of the Parasitic Series Resistance in Raised Source/Drain FinFETs with Polygonal Epitaxy-
dc.typeConference-
dc.type.rimsCONF-
dc.contributor.localauthor정윤하-
dc.citation.titleThe International Conference on Simulation of Semiconductor Processes and Devices-
dc.description.journalClass1-
dc.identifier.conferencecountryUS-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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