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dc.contributor.author정윤하ko
dc.date.accessioned2018-06-18T04:58:04Z-
dc.date.available2018-06-18T04:58:04Z-
dc.date.created2012-04-27-
dc.date.issued2010-10-15-
dc.identifier.citationNanotechnology Materials and Devices Conference-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/61514-
dc.publisherIEEE-
dc.titleAn Equivalent Circuit Model for High-k/Metal Gate Stack MOS Capacitor with Dynamic Leakage-
dc.typeConference-
dc.type.rimsCONF-
dc.contributor.localauthor정윤하-
dc.citation.titleNanotechnology Materials and Devices Conference-
dc.description.journalClass1-
dc.identifier.conferencecountryUS-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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