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An Equivalent Circuit Model for High-k/Metal Gate Stack MOS Capacitor with Dynamic Leakage

Title
An Equivalent Circuit Model for High-k/Metal Gate Stack MOS Capacitor with Dynamic Leakage
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
15-Oct-2010
Publisher
IEEE
URI
http://oasis.postech.ac.kr/handle/2014.oak/61514
Article Type
Conference
Citation
Nanotechnology Materials and Devices Conference, 2010-10-15
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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