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Indium composition fluctuation in InGaN well layer of LED devices analyzed by APT and STEM-EELS

Title
Indium composition fluctuation in InGaN well layer of LED devices analyzed by APT and STEM-EELS
Authors
박찬경구길호이봉호
POSTECH Authors
박찬경
Date Issued
22-May-2011
Publisher
Congress of the International Union of Microbeam Analysis Societies
URI
http://oasis.postech.ac.kr/handle/2014.oak/60915
Article Type
Conference
Citation
5th Congress of the International Union of Microbeam Analysis Societies(IUMAS-V), 2011-05-22
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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