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Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS

Title
Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
24-Aug-2009
Publisher
IEEE
URI
http://oasis.postech.ac.kr/handle/2014.oak/59973
Article Type
Conference
Citation
2009 IEEE International Symposium on Advanced Gate Stack Technology, 2009-08-24
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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