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Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate MOSFET

Title
Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate MOSFET
Authors
김오현송재준문대현
POSTECH Authors
김오현
Date Issued
9-Nov-2010
Publisher
JSAP
URI
http://oasis.postech.ac.kr/handle/2014.oak/57850
Article Type
Conference
Citation
International MNC, 2010-11-09
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Dept of Electrical Enginrg
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