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Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET

Title
Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate nMOSFET
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
7-Dec-2009
Publisher
IEEE
URI
http://oasis.postech.ac.kr/handle/2014.oak/56840
Article Type
Conference
Citation
IEEE International Electron Devices Meeting 2009 (IEDM 2009), page. 6.3.1 - 6.3.4, 2009-12-07
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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