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Characteristics of InP MIS diodes fabricated with in-situ vapor etching and in-situ CVD of PxNy

Title
Characteristics of InP MIS diodes fabricated with in-situ vapor etching and in-situ CVD of PxNy
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
1-Oct-1986
Publisher
47th Fall meeting of the Japan Soc. of Appl. Phys.
URI
http://oasis.postech.ac.kr/handle/2014.oak/56546
Article Type
Conference
Citation
47th Fall meeting of the Japan Soc. of Appl. Phys., page. 639, 1986-10-01
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 JEONG, YOON HA
Dept of Electrical Enginrg
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