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고출력 광양자테 레이저의 광특성 분석 및 나노기술 응용

Title
고출력 광양자테 레이저의 광특성 분석 및 나노기술 응용
Authors
신미향
Date Issued
2010
Publisher
포항공과대학교
Abstract
Light-emitting diodes (LEDs) display has become a multi-million dollar industry, and it is growing. LEDs are under intensive development worldwide for advanced display applications. However, high- power LEDs are bulk devices, suffering therefore from inherent heating problems, and limited to low frequencies far below conventional lasers’ GHz ranges. On the other hand, the photonic quantum ring (PQR) laser is an attractive candidate for next generation display. The PQR laser has unique operating characteristics such as extremely low threshold currents and -dependent thermally stable spectra, where total internal reflections (TIRs) produce helix standing waves in three-dimensional (3D) toroidal cavity of whispering cave modes (WCMs). The WCMs can have both concave modes (mesa type) and convex modes (hole type). The mesa and hole are defined with chemically assisted ion beam etching (CAIBE). The high power PQR of WCM, outperforming conventional LEDs in luminous efficiency, dynamic range and color purity, has a vertical cavity consisting of a QW active region and distributed Bragg reflector (DBR) structures, with 12-petal flower PQR designs for example. In this paper, I report the flower PQR’s optical properties like emission images, the power, and beam profiles. Especially, I have used a home-built 2D/3D single photon scanning system (SPS) for measuring the beam profile of 12-petal flower PQR with a resolution of 0.5μm/step. The experiments show the PQR beam profiles evolving from Laguerre-Gaussian to Gaussian beam profiles within 50 -100 μm ranges. The high power flower PQR laser can be used for RGB full color display, illumination industry and portable devices. Associated with printer array head work, our laboratory used the results of ‘12-petal with hole type flower PQR array’ invention. In particular, SPS analysis and studies of flower PQR thermal properties are described. Next, preliminary work on nano flower PQR laser which is an advanced type of 12-petal flower PQR laser is introduced. For nano flowers, I created a new design of flower PQR laser which has up to 72-petal in a circle of 10 μm diameter. We collaborated with NCNT regarding an e-beam lithography and ICP-RIE etching process for nano flower PQR fabrication. The realization of nano flower PQR laser leads us to fabrication of high power and high density PQR array which can be powerful candidates for next generation semiconductor light source.
URI
http://postech.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000000542243
http://oasis.postech.ac.kr/handle/2014.oak/526
Article Type
Thesis
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