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Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts

Title
Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts
Authors
Park, Tae-EonMin, Byoung-ChulPark, Hee GyumLee, JaejunJo, Moon-HoJang, ChaunKoo, Hyun CheolChoi, Heon-JinChang, Joonyeon
POSTECH Authors
Jo, Moon-Ho
Date Issued
Aug-2017
Publisher
AMER INST PHYSICS
Abstract
We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 k Omega and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices. Published by AIP Publishing.
Keywords
SEMICONDUCTOR NANOWIRES; ROOM-TEMPERATURE; TUNNEL BARRIERS; INJECTION; ACCUMULATION; PERFORMANCE; PRECESSION; CHALLENGES; DEVICES; CHARGE
URI
http://oasis.postech.ac.kr/handle/2014.oak/50926
DOI
10.1063/1.4998587
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 111, no. 6, 2017-08
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 JO, MOON HO
Dept of Materials Science & Enginrg
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