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PBTI and HCI stress-induces trap generation in SiO2/HfO2 gate stack NMOSFETs and its impact on low frequency noise

Title
PBTI and HCI stress-induces trap generation in SiO2/HfO2 gate stack NMOSFETs and its impact on low frequency noise
Authors
백록현이경택강창용최현식홍승호최길복김재철송승현박민상사공현철사공성환이병훈G. BersukerH. H. TsengR. Jammy정윤하
POSTECH Authors
백록현
Date Issued
29-Sep-2008
Publisher
IEEE Device Society
URI
http://oasis.postech.ac.kr/handle/2014.oak/49835
Article Type
Conference
Citation
ISAGST 2008, 2008-09-29
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 BAEK, ROCK HYUN
Dept of Electrical Enginrg
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