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Accurate Extraction of Volume Trap Density from Si-Nanowire FET using the Newly Developed Cylindrical Coordinate Based 1/f noise model

Title
Accurate Extraction of Volume Trap Density from Si-Nanowire FET using the Newly Developed Cylindrical Coordinate Based 1/f noise model
Authors
백록현백창기최현식이정수여윤영여경환김동원김기남김대만정윤하
POSTECH Authors
백록현
Date Issued
24-Feb-2010
Publisher
대한전자공학회
URI
http://oasis.postech.ac.kr/handle/2014.oak/49825
Article Type
Conference
Citation
17th Korean Conference on Semiconductors (2010), 2010-02-24
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 BAEK, ROCK HYUN
Dept of Electrical Enginrg
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