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dc.contributor.author백록현ko
dc.contributor.author백창기ko
dc.contributor.author최현식ko
dc.contributor.author사공현철ko
dc.contributor.author이상현ko
dc.contributor.author최길복ko
dc.contributor.author송승현ko
dc.contributor.author박찬훈ko
dc.contributor.author이정수ko
dc.contributor.author여윤영ko
dc.contributor.author여경환ko
dc.contributor.author김동원ko
dc.contributor.author김기남ko
dc.contributor.author김대만ko
dc.contributor.author정윤하ko
dc.date.accessioned2018-05-24T11:24:52Z-
dc.date.available2018-05-24T11:24:52Z-
dc.date.created2017-02-23-
dc.date.issued2010-05-02-
dc.identifier.citationIEEE IRPS(2010)-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/49484-
dc.publisherIEEE-
dc.titleCharacteristics of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects-
dc.typeConference-
dc.type.rimsCONF-
dc.contributor.localauthor백록현-
dc.contributor.nonIdAuthor백창기-
dc.contributor.nonIdAuthor최현식-
dc.contributor.nonIdAuthor사공현철-
dc.contributor.nonIdAuthor이상현-
dc.contributor.nonIdAuthor최길복-
dc.contributor.nonIdAuthor송승현-
dc.contributor.nonIdAuthor박찬훈-
dc.contributor.nonIdAuthor이정수-
dc.contributor.nonIdAuthor여윤영-
dc.contributor.nonIdAuthor여경환-
dc.contributor.nonIdAuthor김동원-
dc.contributor.nonIdAuthor김기남-
dc.contributor.nonIdAuthor김대만-
dc.contributor.nonIdAuthor정윤하-
dc.citation.titleIEEE IRPS(2010)-
dc.description.journalClass1-
dc.identifier.conferencecountryUS-

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 BAEK, ROCK HYUN
Dept of Electrical Enginrg
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