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Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk

Title
Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk
Authors
백록현고명동이상현백창기여경환김동원이정수김대만정윤하
POSTECH Authors
백록현
Date Issued
15-Aug-2011
Publisher
IEEE
URI
http://oasis.postech.ac.kr/handle/2014.oak/49480
Article Type
Conference
Citation
IEEE-NANO (2011), 2011-08-15
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 BAEK, ROCK HYUN
Dept of Electrical Enginrg
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