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Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects

Title
Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects
Authors
이정수
POSTECH Authors
이정수
Date Issued
6-May-2010
Publisher
IEEE
URI
http://oasis.postech.ac.kr/handle/2014.oak/47645
Article Type
Conference
Citation
IEEE International Reliability Physics Symposium, 2010-05-06
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 LEE, JEONG SOO
Dept of Electrical Enginrg
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