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A nonvolatile Memory Device made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube

Title
A nonvolatile Memory Device made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube
Authors
장현명손종역신영한유상우박윤철임윤탁
POSTECH Authors
장현명
Date Issued
4-Aug-2010
Publisher
Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo
URI
http://oasis.postech.ac.kr/handle/2014.oak/47465
Article Type
Conference
Citation
The 8th Japan-Korea Conference of ferroelectrics, 2010-08-04
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 JANG, HYUN MYUNG
Div of Advanced Materials Science
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