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Very high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy

Title
Very high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy
Authors
김종규K. ChenY. A. XiF. MontE. F. SchubertW. WetzelW. LiuX. LiJ. A. SmartL. J. Schowalter
POSTECH Authors
김종규
Date Issued
2-Aug-2006
Publisher
IEEE Lester Eastman Conference on High Performance Devices
URI
http://oasis.postech.ac.kr/handle/2014.oak/46764
Article Type
Conference
Citation
IEEE Lester Eastman Conference on High Performance Devices, 2006-08-02
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 KIM, JONG KYU
Dept of Materials Science & Enginrg
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