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Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs

Title
Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs
Authors
정윤하
POSTECH Authors
정윤하
Date Issued
23-Sep-2008
Publisher
Japanese Society of Applied Physics
URI
http://oasis.postech.ac.kr/handle/2014.oak/46297
Article Type
Conference
Citation
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM 2008), page. 362 - 363, 2008-09-23
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 JEONG, YOON HA
Dept of Electrical Enginrg
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