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Issue Date	Title
1996-Jan	Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 35, no. 7, page. 3841 - 3844, 1996-01 Kwak, JS; Lee, JL; Baik, HK; Shin, DW; Park, CG; Kim, H
1996-Jan	A low-resistance Pd/Ge/Ti/Au ohmic contact to a high-low doped GaAs field-effect transistor THIN SOLID FILMS, vol. 290, page. 497 - 502, 1996-01 Kwak, JS; Baik, HK; Lee, JL; Park, CG; Kim, H; Suh, KS

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