| Issue Date | Title |
|---|---|
| 2014-Feb | Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access MemoryPDF link , 2014-02 Lee, S; Woo, J; 황현상; Hwang, H; Koo, Y; Song, J; Moon, K; Park, J; Cha, E; Lee, D |
| 2015-Jan | ECS Solid State Letters, vol. 4, no. 3, page. 25 - 28, 2015-01 Misha, SH; Tamanna, N; Woo, J; Lee, S; Song, J; Park, J; Lim, S; Park, J; Hwang, H |
| 2014-Feb | Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memoryPDF link APPLIED PHYSICS LETTERS, vol. 104, no. 5, 2014-02 Lee, S; Woo, J; Lee, D; Cha, E; Park, J; Moon, K; Song, J; Koo, Y; Hwang, H |
| 2015-Jan | Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory link ADVANCED MATERIALS, vol. 27, no. 1, page. 59 - 64, 2015-01 Lee, D; Park, J; Park, J; Woo, J; Cha, E; Lee, S; Moon, K; Song, J; Koo, Y; Hwang, H |
| 2014-Dec | Hardware implementation of associative memory characteristics with analogue-type resistive-switching device link NANOTECHNOLOGY, vol. 25, no. 49, page. 495204, 2014-12 Moon, K; Park, S; Jang, J; Lee, D; Woo, J; Cha, E; Lee, S; Park, J; Song, J; Koo, Y; Hwang, H |
| 2014-Oct | Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM link IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 10, page. 1022 - 1024, 2014-10 Lee, S; Lee, D; Woo, J; Cha, E; Park, J; Hwang, H |
| 2014-Jun | IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 6, page. 636 - 638, 2014-06 Song, J; Lee, D; Woo, J; Koo, Y; Cha, E; Lee, S; Park, J; Moon, K; Misha, SH; Prakash, A; Hwang, H |
| 2013-Oct | IEEE Electron Device Letters, vol. 34, no. 10, page. 1250 - 1252, 2013-10 Lee, D; Woo, J; Cha, E; Park, S; Lee, S; Park, J; Hwang, H |
| 2013-Dec | IEEE Electron Device Letters, vol. 34, no. 12, page. 1515 - 1517, 2013-12 Lee, S; Lee, D; Woo, J; Cha, E; Park, J; Song, J; Moon, K; Koo, Y; Attari, B; Tamanna, N; Haque, MS; Hwang, H |
| 2014-Feb | Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM link IEEE ELECTRON DEVICE LETTERS, vol. 35, no. 2, page. 214 - 216, 2014-02 Lee, D; Song, J; Woo, J; Park, J; Park, S; Cha, E; Lee, S; Koo, Y; Moon, K; Hwang, H |
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