Issue Date | Title |
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2014-Feb | Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access MemoryPDF link , 2014-02 Lee, S; Woo, J; 황현상; Hwang, H; Koo, Y; Song, J; Moon, K; Park, J; Cha, E; Lee, D |
2014-Jan | Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAMPDF link ECS SOLID STATE LETTERS, vol. 3, no. 10, page. P117 - P119, 2014-01 Tamanna, N; Misha, SH; Prakash, A; Lee, D; Woo, J; Cha, E; Attarimashalkoubeh, B; Song, J; Lee, S; Moon, K; Hwang, H |
2014-Jan | Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)PDF link ECS SOLID STATE LETTERS, vol. 3, no. 10, page. P120 - P122, 2014-01 Attarimashalkoubeh, B; Prakash, A; Lee, S; Song, J; Woo, J; Misha, SH; Tamanna, N; Hwang, H |
2015-Jan | ECS Solid State Letters, vol. 4, no. 3, page. 25 - 28, 2015-01 Misha, SH; Tamanna, N; Woo, J; Lee, S; Song, J; Park, J; Lim, S; Park, J; Hwang, H |
2014-Feb | Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memoryPDF link Applied Physics Letters, vol. 104, no. 8, page. 83507, 2014-02 Lee, D; Woo, J; Park, S; Cha, E; Lee, S; Hwang, H |
2013-Nov | Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applicationsPDF link Applied Physics Letters, vol. 103, no. 20, page. 202113, 2013-11 Woo, J; Lee, D; Cha, E; Lee, S; Park, S; Hwang, H |
2014-Sep | Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory link JOURNAL OF ELECTRONIC MATERIALS, vol. 43, no. 9, page. 3635 - 3639, 2014-09 Lee, D; Woo, J; Cha, E; Lee, S; Hwang, H |
2014-Feb | Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memoryPDF link APPLIED PHYSICS LETTERS, vol. 104, no. 5, 2014-02 Lee, S; Woo, J; Lee, D; Cha, E; Park, J; Moon, K; Song, J; Koo, Y; Hwang, H |
2015-Jan | Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory link ADVANCED MATERIALS, vol. 27, no. 1, page. 59 - 64, 2015-01 Lee, D; Park, J; Park, J; Woo, J; Cha, E; Lee, S; Moon, K; Song, J; Koo, Y; Hwang, H |
2014-Dec | Hardware implementation of associative memory characteristics with analogue-type resistive-switching device link NANOTECHNOLOGY, vol. 25, no. 49, page. 495204, 2014-12 Moon, K; Park, S; Jang, J; Lee, D; Woo, J; Cha, E; Lee, S; Park, J; Song, J; Koo, Y; Hwang, H |
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