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Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high on/off ratio for selector application

Title
Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high on/off ratio for selector application
Authors
HWANG, HYUNSANGJaehyuk Park,Tobias HadamekAgham B. PosadasEuijun ChaAlexander A. Demkov
Date Issued
Jun-2017
Publisher
NATURE PUBLISHING GROUP
Abstract
NbO2 has the potential for a variety of electronic applications due to its electrically induced insulatorto-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the origin of leakage current in NbOx is partly due to insufficient Schottky barrier height originating from interface defects between the electrodes and NbOx layer. The leakage current problem can be addressed by inserting thin NiOy barrier layers. The NiOy inserted NbOx device is drift-free and exhibits high I-on/I-off ratio (> 5400), fast switching speed (< 2 ns), and high operating temperature (> 453 K) characteristics which are highly suitable to selector application for x-point memory arrays.We show that NbOx device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrates improved readout margin (> 29 word lines) suitable for x-point memory array application.
URI
http://oasis.postech.ac.kr/handle/2014.oak/39077
ISSN
2045-2322
Article Type
Article
Citation
Scientific Reports, vol. 7, 2017-06
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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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