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Influence of tensile-strain-induced oxygen deficiency on metalinsulator transitions in NdNiO3−δ epitaxial thin films

Title
Influence of tensile-strain-induced oxygen deficiency on metalinsulator transitions in NdNiO3−δ epitaxial thin films
Authors
Seungyang HeoChadol OhJunwoo SonHyun Myung Jang
POSTECH Authors
Junwoo Son
Date Issued
Jul-2017
Publisher
Nature Publishing Group
Abstract
We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3-δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tended to increase oxygen deficiency (δ) in NdNiO3-δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.
URI
http://oasis.postech.ac.kr/handle/2014.oak/39056
DOI
10.1038/s41598-017-04884-2
ISSN
2045-2322
Article Type
Article
Citation
scientific reports, vol. 7, 2017-07
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 SON, JUNWOO
Dept of Materials Science & Enginrg
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