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Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria

Title
Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria
Authors
CHOI, SI YOUNGY. -W. KimS. H. JangT. NishimuraS. D. Kim
POSTECH Authors
CHOI, SI YOUNG
Date Issued
Dec-2017
Publisher
ELSEVIER SCI LTD
Abstract
A dense silicon carbide (SiC) ceramic with a very high flexural strength at 2000 degrees C (981 +/- 128 MPa) was obtained by conventional hot-pressing with extremely low additive content (2000 ppm Y2O3). Observations using high-resolution transmission electron microscopy (HRTEM) showed that (1) homophase (SiC/SiC) boundaries were clean without an intergranular glassy phase and (2) junction pockets consisted of nanocrystalline Y-containing phase embedded in an amorphous Y-Si-O-C-N phase. The excellent strength at 2000 degrees C was attributed to the clean SiC/SiC boundary and the strengthening effect of plastic deformation. (C) 2017 Elsevier Ltd. All rights reserved.
A dense silicon carbide (SiC) ceramic with a very high flexural strength at 2000 degrees C (981 +/- 128 MPa) was obtained by conventional hot-pressing with extremely low additive content (2000 ppm Y2O3). Observations using high-resolution transmission electron microscopy (HRTEM) showed that (1) homophase (SiC/SiC) boundaries were clean without an intergranular glassy phase and (2) junction pockets consisted of nanocrystalline Y-containing phase embedded in an amorphous Y-Si-O-C-N phase. The excellent strength at 2000 degrees C was attributed to the clean SiC/SiC boundary and the strengthening effect of plastic deformation. (C) 2017 Elsevier Ltd. All rights reserved.
Keywords
SIC-CERAMICS; MECHANICAL-PROPERTIES; ALUMINUM NITRIDE; ELECTROCHEMICAL CORROSION; ELECTRICAL-PROPERTIES; PHASE; OXIDE; ADDITIVES; TOUGHNESS; RESISTANCE
URI
http://oasis.postech.ac.kr/handle/2014.oak/38950
DOI
10.1016/j.jeurceramsoc.2017.07.002
ISSN
0955-2219
Article Type
Article
Citation
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, vol. 37, no. 15, page. 4449 - 4455, 2017-12
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