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Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

Title
Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition
Authors
Masoud AkbariMin-Kyu KimDongshin KimJang-Sik Lee
POSTECH Authors
Jang-Sik Lee
Date Issued
Jul-2017
Publisher
Royal Society of Chemistry
Abstract
The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated. Metal oxides were deposited by atomic layer deposition. Al and Pt were used as top and bottom electrodes, respectively. Compared with AlOX and HfOX monolayer structures, the bilayer structure showed lower set/reset voltages and more-uniform resistive switching properties. It also exhibited good data retention and endurance. The Al top electrode may gather oxygen ions from the oxide layer underneath and thereby create oxygen vacancies in the oxide layer. The uniform electrical property of the bilayer structure is attributed to confined formation/rupture of conductive filaments in the HfOX layer, whereas undissociated filaments in the AlOX layer nucleate rapid regeneration of filaments.
URI
http://oasis.postech.ac.kr/handle/2014.oak/38162
DOI
10.1039/C6RA26872B
ISSN
2046-2069
Article Type
Article
Citation
RSC Advances, page. 16704 - 16708, 2017-07
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 LEE, JANG SIK
Dept of Materials Science & Enginrg
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