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dc.contributor.authorChadol Ohko
dc.contributor.authorSeungyang Heoko
dc.contributor.authorJang, HMko
dc.contributor.authorSon, Jko
dc.date.available2017-07-19T12:50:15Z-
dc.date.created2016-10-17-
dc.date.issued2016-03-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.108, no.12, pp.122106-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/36522-
dc.languageEnglish-
dc.publisherAmerican institute of Physics-
dc.titleCorrelated memory resistor in epitaxial NdNiO3 heterostructures with asymmetrical proton concentration-
dc.typeArticle-
dc.identifier.pid20043-
dc.identifier.pid100531-
dc.type.rimsART-
dc.contributor.localauthorJang, HM-
dc.contributor.localauthorSon, J-
dc.contributor.nonIdAuthorChadol Oh-
dc.contributor.nonIdAuthorSeungyang Heo-
dc.identifier.wosid000373348000024-
dc.citation.number12-
dc.citation.startPage122106-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume108-
dc.identifier.doi10.1063/1.4944842-
dc.description.journalClass1-

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Div of Advanced Materials Science
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