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Cited 11 time in webofscience Cited 11 time in scopus
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dc.contributor.authorPark, Jko
dc.contributor.authorCha, Eko
dc.contributor.authorLee, Dko
dc.contributor.authorLee, Sko
dc.contributor.authorSong, Jko
dc.contributor.authorPark, Jko
dc.contributor.authorHwang, Hko
dc.date.available2017-07-19T12:14:40Z-
dc.date.created2016-01-19-
dc.date.issued2015-11-
dc.identifier.citationMICROELECTRONIC ENGINEERING, v.147, pp.318 - 320-
dc.identifier.issn0167-9317-
dc.identifier.urihttp://oasis.postech.ac.kr/handle/2014.oak/35497-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titleImproved threshold switching characteristics of multi-layer NbOx for 3-D selector application-
dc.typeArticle-
dc.identifier.doi10.1016/J.MEE.2015.04.045-
dc.type.rimsART-
dc.contributor.localauthorHwang, H-
dc.contributor.nonIdAuthorPark, J-
dc.contributor.nonIdAuthorCha, E-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorLee, S-
dc.contributor.nonIdAuthorSong, J-
dc.contributor.nonIdAuthorPark, J-
dc.identifier.wosid000362308000076-
dc.date.tcdate2019-03-01-
dc.citation.endPage320-
dc.citation.startPage318-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume147-
dc.identifier.scopusid2-s2.0-84929299590-
dc.description.journalClass1-
dc.description.wostc9-
dc.description.scptc9*
dc.date.scptcdate2018-05-121*

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 HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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